US Patent Issued to UNITED MICROELECTRONICS on Sept. 23 for "Semiconductor device and method for fabricating the same" (Taiwanese Inventors)

ALEXANDRIA, Va., Sept. 23 -- United States Patent no. 12,426,515, issued on Sept. 23, was assigned to UNITED MICROELECTRONICS CORP. (Hsin-Chu, Taiwan).

"Semiconductor device and method for fabricating the same" was invented by Hsiang-Wen Ke (Kaohsiung, Taiwan), Wei-Chuan Tsai (Changhua County, Taiwan), Yen-Tsai Yi (Tainan, Taiwan) and Jin-Yan Chiou (Tainan, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method for fabricating a semiconductor device includes the steps of forming an inter-metal dielectric (IMD) layer on a substrate, forming a trench in the IMD layer, forming a barrier layer in the trench, forming a nucleation layer on the barrier layer, performing an anneal process to form a silicide ...