US Patent Issued to UNITED MICROELECTRONICS on Sept. 23 for "Resistive random access memory device and fabrication method thereof" (Taiwanese Inventors)

ALEXANDRIA, Va., Sept. 23 -- United States Patent no. 12,426,520, issued on Sept. 23, was assigned to UNITED MICROELECTRONICS CORP. (Hsin-Chu, Taiwan).

"Resistive random access memory device and fabrication method thereof" was invented by Wen-Jen Wang (Tainan, Taiwan), Yu-Huan Yeh (Hsinchu, Taiwan) and Chuan-Fu Wang (Miaoli County, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A resistive memory device includes a substrate; a dielectric layer disposed on the substrate; a conductive via disposed in the dielectric layer; and a memory stack structure disposed on the conductive via and the dielectric layer. The memory stack structure includes a bottom electrode layer, a resistive switching layer on the b...