US Patent Issued to UNITED MICROELECTRONICS on Sept. 2 for "Structure with photodiode, high electron mobility transistor, surface acoustic wave device and fabricating method of the same" (Taiwanese Inventors)

ALEXANDRIA, Va., Sept. 3 -- United States Patent no. 12,406,973, issued on Sept. 2, was assigned to UNITED MICROELECTRONICS CORP. (Hsin-Chu, Taiwan).

"Structure with photodiode, high electron mobility transistor, surface acoustic wave device and fabricating method of the same" was invented by Da-Jun Lin (Kaohsiung, Taiwan), Chih-Wei Chang (Tainan, Taiwan), Fu-Yu Tsai (Tainan, Taiwan), Bin-Siang Tsai (Changhua County, Taiwan) and Chung-Yi Chiu (Tainan, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A structure with a photodiode, an HEMT and an SAW device includes a photodiode and an HEMT. The photodiode includes a first electrode and a second electrode. The first electrode contacts a P-type III-V semic...