US Patent Issued to UNITED MICROELECTRONICS on Sept. 2 for "Electrostatic discharge protection device including source silicide pattern and drain silicide pattern" (Taiwanese Inventors)

ALEXANDRIA, Va., Sept. 3 -- United States Patent no. 12,408,408, issued on Sept. 2, was assigned to UNITED MICROELECTRONICS CORP. (Hsin-Chu, Taiwan).

"Electrostatic discharge protection device including source silicide pattern and drain silicide pattern" was invented by Kuan-Yu Lu (Nantou County, Taiwan), Hou-Jen Chiu (Taichung, Taiwan), Mei-Ling Chao (Tainan, Taiwan), Tien-Hao Tang (Hsinchu, Taiwan) and Kuan-Cheng Su (Taipei, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "An electrostatic discharge (ESD) protection device includes a semiconductor substrate, a gate structure, a source doped region, a drain doped region, source silicide patterns, and drain silicide patterns. The gate structure is dispo...