ALEXANDRIA, Va., Sept. 17 -- United States Patent no. 12,419,075, issued on Sept. 16, was assigned to UNITED MICROELECTRONICS CORP. (Hsin-Chu, Taiwan).
"Transistor with embedded insulating structure set" was invented by Ming-Hua Tsai (Tainan, Taiwan), Chin-Chia Kuo (Tainan, Taiwan) and Wei-Hsuan Chang (Tainan, Taiwan).
According to the abstract* released by the U.S. Patent & Trademark Office: "A transistor with an embedded insulating structure set includes a substrate. A gate is disposed on the substrate. A first lightly doped region is disposed at one side of the gate. A second lightly doped region is disposed at another side of the gate. The first lightly doped region and the second lightly doped region have the same conductive type. Th...