ALEXANDRIA, Va., Sept. 17 -- United States Patent no. 12,419,093, issued on Sept. 16, was assigned to United Microelectronics Corp. (Hsinchu, Taiwan).
"Structure of flash memory cell" was invented by Chih-Jung Chen (Hsinchu County, Taiwan) and Yu-Jen Yeh (Taichung, Taiwan).
According to the abstract* released by the U.S. Patent & Trademark Office: "A structure of flash memory cell includes a substrate. A floating gate is disposed on the substrate. A low dielectric constant (low-K) spacer is disposed on a sidewall of the floating gate. A trench isolation structure has a base part disposed in the substrate and a protruding part above the substrate protruding from the base part. The low-K spacer is sandwiched between the floating gate and th...