US Patent Issued to UNITED MICROELECTRONICS on Sept. 16 for "Silicon-on-insulator substrate and method of manufacturing the same" (Singaporean Inventors)

ALEXANDRIA, Va., Sept. 17 -- United States Patent no. 12,419,081, issued on Sept. 16, was assigned to UNITED MICROELECTRONICS CORP. (Hsin-Chu, Taiwan).

"Silicon-on-insulator substrate and method of manufacturing the same" was invented by Chunyuan Qi (Singapore), Sheng Zhang (Singapore), Xingxing Chen (Singapore) and Chien-Kee Pang (Singapore).

According to the abstract* released by the U.S. Patent & Trademark Office: "An silicon-on-insulator substrate is provided in the present invention, including a handler, a polysilicon trap-rich layer formed on the handler, an oxide layer formed on the polysilicon trap-rich layer and a monocrystalline silicon layer formed directly on the oxide layer, wherein a bonding interface is between the monocrys...