US Patent Issued to UNITED MICROELECTRONICS on Sept. 16 for "Semiconductor device including III-V compound semiconductor layer and manufacturing method thereof" (Taiwanese Inventors)

ALEXANDRIA, Va., Sept. 17 -- United States Patent no. 12,419,070, issued on Sept. 16, was assigned to UNITED MICROELECTRONICS CORP. (Hsin-Chu, Taiwan).

"Semiconductor device including III-V compound semiconductor layer and manufacturing method thereof" was invented by Da-Jun Lin (Kaohsiung, Taiwan), Chih-Wei Chang (Tainan, Taiwan), Fu-Yu Tsai (Tainan, Taiwan) and Bin-Siang Tsai (Changhua County, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A manufacturing method of a semiconductor device includes the following steps. A III-V compound barrier layer is formed on a III-V compound semiconductor layer. A passivation layer is formed on the III-V compound barrier layer. A silicon layer is formed on the pas...