US Patent Issued to UNITED MICROELECTRONICS on Sept. 16 for "High electron mobility transistor and method for fabricating the same" (Taiwanese Inventors)

ALEXANDRIA, Va., Sept. 17 -- United States Patent no. 12,419,071, issued on Sept. 16, was assigned to UNITED MICROELECTRONICS CORP. (Hsin-Chu, Taiwan).

"High electron mobility transistor and method for fabricating the same" was invented by Chih-Tung Yeh (Taoyuan, Taiwan) and Wen-Jung Liao (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method for fabricating a high electron mobility transistor (HEMT) includes the steps of forming a buffer layer on a substrate, forming a barrier layer on the buffer layer, forming a p-type semiconductor layer on the barrier layer, forming a hole injection buffer layer (HIBL) on the p-type semiconductor layer, and forming a gate electrode on the HIBL."

The pa...