US Patent Issued to UNITED MICROELECTRONICS on Sept. 16 for "Data storage cell, memory, and memory fabrication method thereof" (Taiwanese Inventors)

ALEXANDRIA, Va., Sept. 17 -- United States Patent no. 12,419,060, issued on Sept. 16, was assigned to UNITED MICROELECTRONICS CORP. (Hsin-Chu, Taiwan).

"Data storage cell, memory, and memory fabrication method thereof" was invented by Kuo-Hsing Lee (Hsinchu County, Taiwan) and Sheng-Yuan Hsueh (Tainan, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "The invention discloses a data storage cell. The data storage cell includes a storage structure, a first transistor, and a second transistor. A first end of the storage structure is electrically connected to a bit line. The first transistor includes a first gate, a first drain, and a first source. The second transistor includes a second gate, a second drain...