ALEXANDRIA, Va., Sept. 17 -- United States Patent no. 12,418,009, issued on Sept. 16, was assigned to UNITED MICROELECTRONICS CORP. (Hsin-Chu, Taiwan).

"Bonded semiconductor structure and method for forming the same" was invented by Purakh Raj Verma (Singapore), Su Xing (Singapore) and Shyam Parthasarathy (Singapore).

According to the abstract* released by the U.S. Patent & Trademark Office: "A bonded semiconductor structure includes a first device wafer and a second device wafer. The first device wafer includes a first insulating layer, a first device layer on the first insulating layer, and a first bonding layer on the first device layer. The second device wafer includes a second insulating layer, a second device layer on a first side o...