US Patent Issued to UNITED MICROELECTRONICS on Oct. 7 for "Static random access memory and method for fabricating the same" (Taiwanese Inventor)

ALEXANDRIA, Va., Oct. 8 -- United States Patent no. 12,439,579, issued on Oct. 7, was assigned to UNITED MICROELECTRONICS CORP. (Hsin-Chu, Taiwan).

"Static random access memory and method for fabricating the same" was invented by Chia-Chen Sun (Kaohsiung, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method for fabricating a static random access memory (SRAM) includes the steps of forming a first fin-shaped structure for a first pull-down (PD) transistor on a substrate, forming a second fin-shaped structure for a second PD transistor on the substrate, forming a third fin-shaped structure for a first pass gate (PG) transistor on the substrate, and forming a fourth fin-shaped structure for a second P...