ALEXANDRIA, Va., Oct. 8 -- United States Patent no. 12,437,790, issued on Oct. 7, was assigned to UNITED MICROELECTRONICS CORP. (Hsin-Chu, Taiwan).

"Semiconductor structure and manufacturing method thereof" was invented by Hung-Chan Lin (Tainan, Taiwan), Yu-Ping Wang (Hsinchu, Taiwan) and Chien-Ting Lin (Tainan, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "The invention provides a semiconductor structure, which comprises an MTJ (magnetic tunneling junction) stacked structure arranged on a substrate, and a SOT (spin orbit torque) layer arranged on the MTJ stacked structure, wherein the SOT layer comprises a first part with a thick thickness and two second parts with a thin thickness."

The patent was...