ALEXANDRIA, Va., Oct. 8 -- United States Patent no. 12,438,092, issued on Oct. 7, was assigned to UNITED MICROELECTRONICS CORP. (Hsin-Chu, Taiwan).

"Semiconductor device having contact plug connected to gate structure on PMOS region" was invented by Shih-Cheng Chen (Tainan, Taiwan), Li-Hsuan Ho (Kaohsiung, Taiwan), Tsuo-Wen Lu (Kaohsiung, Taiwan), Shih-Hao Liang (Tainan, Taiwan), Tsung-Hsun Wu (Kaohsiung, Taiwan), Po-Jen Chuang (Kaohsiung, Taiwan) and Chi-Mao Hsu (Tainan, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device including a substrate having a NMOS region and a PMOS region; a metal gate extending continuously along a first direction from the NMOS region to the PMOS region o...