US Patent Issued to UNITED MICROELECTRONICS on Oct. 7 for "Resistive random access memory structure" (Taiwanese Inventors)

ALEXANDRIA, Va., Oct. 8 -- United States Patent no. 12,439,838, issued on Oct. 7, was assigned to UNITED MICROELECTRONICS CORP. (Hsin-Chu, Taiwan).

"Resistive random access memory structure" was invented by Wen-Jen Wang (Tainan, Taiwan), Chun-Hung Cheng (Kaohsiung, Taiwan) and Chuan-Fu Wang (Miaoli County, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A resistive random access memory (RRAM) structure includes a RRAM cell, spacers and a dielectric layer. The RRAM cell is disposed on a substrate. The spacers are disposed beside the RRAM cell, wherein widths of top surfaces of the spacers are larger than or equal to widths of bottom surfaces of the spacers. The dielectric layer blanketly covers the subs...