US Patent Issued to UNITED MICROELECTRONICS on Oct. 21 for "Fabricating method of semiconductor device" (Taiwanese Inventors)

ALEXANDRIA, Va., Oct. 28 -- United States Patent no. 12,453,149, issued on Oct. 21, was assigned to UNITED MICROELECTRONICS CORP. (Hsin-Chu, Taiwan).

"Fabricating method of semiconductor device" was invented by Chia-Hua Chang (Kaohsiung, Taiwan), Jian-Feng Li (Tainan, Taiwan) and Hsiang-Chieh Yen (Penghu County, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "The present disclosure provides a semiconductor device and a fabricating method thereof, the semiconductor device including a substrate, a nucleation layer, a buffer layer, an active layer and a gate electrode. The nucleation layer is disposed on the substrate, and the buffer layer is disposed on the nucleation layer, wherein the buffer layer incl...