ALEXANDRIA, Va., Oct. 21 -- United States Patent no. 12,444,652, issued on Oct. 14, was assigned to UNITED MICROELECTRONICS CORP. (Hsin-Chu, Taiwan).
"Semiconductor device and method for fabricating the same" was invented by Wen-Wen Zhang (Changhua County, Taiwan), Ming-Chou Lu (Pingtung County, Taiwan), Kun-Chen Ho (Tainan, Taiwan), Dien-Yang Lu (Kaohsiung, Taiwan), Chun-Lung Chen (Tainan, Taiwan) and Chung-Yi Chiu (Tainan, Taiwan).
According to the abstract* released by the U.S. Patent & Trademark Office: "A method for fabricating a semiconductor device includes the steps of forming a gate structure on a substrate, forming a contact etch stop layer (CESL) on the gate structure, forming an interlayer dielectric (ILD) layer on the CESL, f...