ALEXANDRIA, Va., Nov. 6 -- United States Patent no. 12,464,953, issued on Nov. 4, was assigned to UNITED MICROELECTRONICS CORP. (Hsin-Chu, Taiwan).

"Method for fabricating semiconductor device including embedded magnetic resistance random access memory" was invented by Hui-Lin Wang (Taipei, Taiwan), Po-Kai Hsu (Tainan, Taiwan), Hung-Yueh Chen (Hsinchu, Taiwan), Chen-Yi Weng (New Taipei, Taiwan), Si-Han Tsai (Taichung, Taiwan), Jing-Yin Jhang (Tainan, Taiwan) and Yu-Ping Wang (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method of fabricating a semiconductor device includes the steps of: providing a semiconductor structure including a memory region and a logic region. The semiconductor str...