US Patent Issued to United Microelectronics on Nov. 4 for "Magnetoresistive random access memory (MRAM) device and method of forming the same" (Taiwanese Inventors)

ALEXANDRIA, Va., Nov. 6 -- United States Patent no. 12,464,958, issued on Nov. 4, was assigned to United Microelectronics Corp. (Hsinchu, Taiwan).

"Magnetoresistive random access memory (MRAM) device and method of forming the same" was invented by Chih-Wei Kuo (Tainan, Taiwan), Hung-Chan Lin (Tainan, Taiwan) and Chung Yi Chiu (Tainan, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "Provided is a magnetoresistive random access memory (MRAM) device including a bottom electrode, a magnetic tunnel junction (MTJ) structure, a first spin orbit torque (SOT) layer, a cap layer, a second SOT layer, an etch stop layer, and an upper metal line layer. The MTJ structure is disposed on the bottom electrode. The firs...