US Patent Issued to UNITED MICROELECTRONICS on Nov. 25 for "Resistive memory device and manufacturing method thereof" (Taiwanese Inventors)

ALEXANDRIA, Va., Nov. 25 -- United States Patent no. 12,484,461, issued on Nov. 25, was assigned to UNITED MICROELECTRONICS CORP. (Hsin-Chu, Taiwan).

"Resistive memory device and manufacturing method thereof" was invented by Wen-Jen Wang (Tainan, Taiwan), Yu-Huan Yeh (Hsinchu, Taiwan) and Chuan-Fu Wang (Miaoli County, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A resistive memory device includes a dielectric layer, a via connection structure, a stacked structure, and an insulating structure. The via connection structure is disposed in the dielectric layer. The stacked structure is disposed on the via connection structure and the dielectric layer. The insulating structure penetrates through the stac...