US Patent Issued to United Microelectronics on Nov. 25 for "Method of fabricating magnetic tunneling junction device" (Taiwanese Inventors)

ALEXANDRIA, Va., Nov. 25 -- United States Patent no. 12,484,452, issued on Nov. 25, was assigned to United Microelectronics Corp. (Hsinchu, Taiwan).

"Method of fabricating magnetic tunneling junction device" was invented by Shun-Yu Huang (Kaohsiung, Taiwan), Yi-Wei Tseng (New Taipei, Taiwan), Chih-Wei Kuo (Tainan, Taiwan), Yi-Xiang Chen (Tainan, Taiwan), Hsuan-Hsu Chen (Tainan, Taiwan) and Chun-Lung Chen (Tainan, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method of fabricating an MTJ device is provided including the following process. A first via is formed in the first dielectric layer. A first electrode layer is formed on the first dielectric layer and the first via. An MTJ stack layer is forme...