US Patent Issued to UNITED MICROELECTRONICS on Nov. 25 for "Method for fabricating magnetoresistive random access memory" (Taiwanese Inventor)

ALEXANDRIA, Va., Nov. 25 -- United States Patent no. 12,484,453, issued on Nov. 25, was assigned to UNITED MICROELECTRONICS CORP. (Hsin-Chu, Taiwan).

"Method for fabricating magnetoresistive random access memory" was invented by Hui-Lin Wang (Taipei, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method for fabricating semiconductor device includes the steps of first forming a bottom electrode on a substrate, forming a magnetic tunneling junction (MTJ) on the bottom electrode, and then forming a cap layer on the MTJ. Preferably, the formation of the cap layer could be accomplished by the following steps: (a) forming a first metal layer on the MTJ; (b) forming a second metal layer on the first metal ...