ALEXANDRIA, Va., Nov. 25 -- United States Patent no. 12,484,237, issued on Nov. 25, was assigned to UNITED MICROELECTRONICS CORP. (Hsin-Chu, Taiwan).
"Insulated gate bipolar transistor" was invented by Hsin-Ming Hou (Tainan, Taiwan).
According to the abstract* released by the U.S. Patent & Trademark Office: "An insulated gate bipolar transistor includes a P-type group III-V nitride compound layer. An N-type group III-V nitride compound layer contacts a side of the P-type group III-V nitride compound layer. An HEMT is disposed on the N-type group III-V nitride compound layer. The HEMT includes a first group III-V nitride compound layer disposed on the N-type group III-V nitride compound layer. A second group III-V nitride compound layer is...