US Patent Issued to UNITED MICROELECTRONICS on Nov. 25 for "Electrically erasable programmable read only memory cell and forming method thereof" (Singaporean Inventors)

ALEXANDRIA, Va., Nov. 25 -- United States Patent no. 12,484,218, issued on Nov. 25, was assigned to UNITED MICROELECTRONICS CORP. (Hsin-Chu, Taiwan).

"Electrically erasable programmable read only memory cell and forming method thereof" was invented by Aaron Chen (Singapore), Chi Ren (Singapore) and Chao-Sheng Hsieh (Singapore).

According to the abstract* released by the U.S. Patent & Trademark Office: "An electrically erasable programmable read only memory (EEPROM) cell includes a first gate, a second gate and an erasing gate. The first gate and the second gate are disposed on a substrate, wherein the first gate includes a first floating gate and a first control gate stacked from bottom to top, and the second gate includes a second floati...