US Patent Issued to UNITED MICROELECTRONICS on Nov. 18 for "Semiconductor memory structure and fabrication method thereof" (Singaporean, Taiwanese Inventors)

ALEXANDRIA, Va., Nov. 18 -- United States Patent no. 12,477,740, issued on Nov. 18, was assigned to UNITED MICROELECTRONICS CORP. (Hsin-Chu, Taiwan).

"Semiconductor memory structure and fabrication method thereof" was invented by Zhen Chen (Singapore), Wei Cheng (Singapore), Kok Wun Tan (Singapore) and Shen-De Wang (Hsinchu County, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor memory structure includes a substrate having a device cell region and a contact forming region in proximity to the device cell region. A memory cell transistor is disposed within the device cell region. The memory cell transistor includes a gate and a charge storage structure between the gate and the substrate. ...