ALEXANDRIA, Va., Nov. 18 -- United States Patent no. 12,477,727, issued on Nov. 18, was assigned to UNITED MICROELECTRONICS CORP. (Hsin-Chu, Taiwan).
"Semiconductor memory device having a symmetric active area layout structure" was invented by Hung-Hsun Shuai (Tainan, Taiwan), Yu-Jen Yeh (Taichung, Taiwan) and Chih-Jung Chen (Hsinchu County, Taiwan).
According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor memory device includes a substrate, a plurality of memory cells and at least one strap cell between the plurality of memory cells disposed along a first direction, a plurality of bit line (BL) contacts electrically connected to a plurality of drain doped regions of the plurality of memory cells, respec...