US Patent Issued to United Microelectronics on Nov. 11 for "High electron mobility transistor (HEMT) device for increasing the Schottky diode current and method of forming the same" (Taiwanese Inventors)

ALEXANDRIA, Va., Nov. 11 -- United States Patent no. 12,471,304, issued on Nov. 11, was assigned to United Microelectronics Corp. (Hsinchu, Taiwan).

"High electron mobility transistor (HEMT) device for increasing the Schottky diode current and method of forming the same" was invented by Wei Jen Chen (Tainan, Taiwan) and Kai Lin Lee (Kinmen County, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A high electron mobility transistor (HEMT) device and a method of forming the HEMT device are provided. The HEMT device includes a substrate, a channel layer, a barrier layer, and a gate structure. The substrate has at least one active region. The channel layer is disposed on the at least one active region. The ...