US Patent Issued to UNITED MICROELECTRONICS on May 6 for "High electron mobility transistor with improved barrier layer" (Taiwanese Inventor)

ALEXANDRIA, Va., June 10 -- United States Patent no. 12,294,026, issued on May 6, was assigned to UNITED MICROELECTRONICS CORP. (Hsin-Chu, Taiwan).

"High electron mobility transistor with improved barrier layer" was invented by Po-Yu Yang (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method for fabricating high electron mobility transistor (HEMT) includes the steps of: forming a buffer layer on a substrate; forming a barrier layer on the buffer layer; forming a gate dielectric layer on the barrier layer; forming a work function metal layer on the gate dielectric layer; patterning the work function metal layer and the gate dielectric layer; forming a gate electrode on the work function met...