US Patent Issued to UNITED MICROELECTRONICS on May 6 for "Gallium nitride device with field plate structure and method of manufacturing the same" (Taiwanese Inventors)

ALEXANDRIA, Va., June 10 -- United States Patent no. 12,293,941, issued on May 6, was assigned to UNITED MICROELECTRONICS CORP. (Hsin-Chu, Taiwan).

"Gallium nitride device with field plate structure and method of manufacturing the same" was invented by Da-Jun Lin (Kaohsiung, Taiwan), Fu-Yu Tsai (Tainan, Taiwan), Bin-Siang Tsai (Changhua County, Taiwan) and Chung-Yi Chiu (Tainan, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A gallium nitride (GaN) device with field plate structure, including a substrate, a gate on the substrate and a passivation layer covering on the gate, a source and a drain on the substrate and the passivation layer, a stop layer on the source, the drain and the passivation layer,...