US Patent Issued to UNITED MICROELECTRONICS on May 27 for "SOT MRAM structure and fabricating method of the same" (Taiwanese Inventors)

ALEXANDRIA, Va., June 17 -- United States Patent no. 12,317,512, issued on May 27, was assigned to UNITED MICROELECTRONICS CORP. (Hsin-Chu, Taiwan).

"SOT MRAM structure and fabricating method of the same" was invented by Chih-Wei Kuo (Tainan, Taiwan), Hung-Chan Lin (Tainan, Taiwan) and Chung-Yi Chiu (Tainan, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "An SOT MRAM structure includes a word line. A second source/drain doping region and a fourth source/drain doping region are disposed at the same side of the word line. A first conductive line contacts the second source/drain doping region. A second conductive line contacts the fourth source/drain doping region. The second conductive line includes a th...