US Patent Issued to UNITED MICROELECTRONICS on May 27 for "Semiconductor structure with wave shaped erase gate and forming method thereof" (Taiwanese Inventors)

ALEXANDRIA, Va., June 17 -- United States Patent no. 12,315,571, issued on May 27, was assigned to UNITED MICROELECTRONICS CORP. (Hsin-Chu, Taiwan).

"Semiconductor structure with wave shaped erase gate and forming method thereof" was invented by Yi-Ning Peng (Miaoli County, Taiwan), Hsueh-Chun Hsiao (Hsinchu County, Taiwan) and Tzu-Yun Chang (Hsinchu County, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "An electrically erasable programmable read only memory (EEPROM) includes a substrate, isolation structures, a row of erase gate and a row of floating gates. The isolation structures are defined in the substrate to extend in a first direction. The row of erase gate having a wave shape is disposed acros...