ALEXANDRIA, Va., June 17 -- United States Patent no. 12,317,547, issued on May 27, was assigned to UNITED MICROELECTRONICS CORP. (Hsin-Chu, Taiwan).

"Method of fabricating semiconductor device having epitaxial structure" was invented by Kuang-Hsiu Chen (Tainan, Taiwan), Sung-Yuan Tsai (Yunlin County, Taiwan), Chi-Hsuan Tang (Kaohsiung, Taiwan), Chun-Wei Yu (Tainan, Taiwan) and Yu-Ren Wang (Tainan, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device and a method of forming the same, the semiconductor device includes a substrate, a gate structure and an epitaxial structure. The gate structure is disposed on the substrate, and the epitaxial structure is disposed in the substrate, at one...