ALEXANDRIA, Va., June 17 -- United States Patent no. 12,317,565, issued on May 27, was assigned to UNITED MICROELECTRONICS CORP. (Hsin-Chu, Taiwan).

"Manufacturing method of semiconductor device" was invented by Chih-Tung Yeh (Taoyuan, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device includes a III-V compound semiconductor layer and a source/drain structure. The source/drain structure is disposed on the III-V compound semiconductor layer. The source/drain structure includes a metal layer and metal silicide patterns. The metal layer is disposed on the metal silicide patterns, and a portion of the metal layer is disposed between the metal silicide patterns adjacent to each other." ...