ALEXANDRIA, Va., June 16 -- United States Patent no. 12,310,015, issued on May 20, was assigned to UNITED MICROELECTRONICS CORP. (Hsin-Chu, Taiwan).
"Semiconductor memory device" was invented by Yu-Jen Yeh (Taichung, Taiwan), Hung-Hsun Shuai (Tainan, Taiwan) and Chih-Jung Chen (Hsinchu County, Taiwan).
According to the abstract* released by the U.S. Patent & Trademark Office: "A memory cell includes a substrate, a floating gate on the substrate, a control gate on the floating gate, a first dielectric layer between the floating gate and the control gate, an erase gate merged with the control gate and disposed on a first sidewall of the floating gate, a second dielectric layer between the floating gate and the erase gate, a select gate on a...