US Patent Issued to UNITED MICROELECTRONICS on May 20 for "Semiconductor device and method for forming the same" (Taiwanese Inventors)

ALEXANDRIA, Va., June 16 -- United States Patent no. 12,310,083, issued on May 20, was assigned to UNITED MICROELECTRONICS CORP. (Hsin-Chu, Taiwan).

"Semiconductor device and method for forming the same" was invented by Chang-Po Hsiung (Hsinchu, Taiwan) and Ching-Chung Yang (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device is disclosed. The semiconductor device includes a substrate, an active region in the substrate, a recessed region in the active region, a gate dielectric layer on the recessed region, a gate structure on the gate dielectric layer, and a source/drain region in the active region and at a side of the gate structure. An edge portion of the gate dielectric l...