ALEXANDRIA, Va., June 16 -- United States Patent no. 12,310,259, issued on May 20, was assigned to UNITED MICROELECTRONICS CORP. (Hsin-Chu, Taiwan).

"Semiconductor device and method for fabricating the same" was invented by Hung-Chan Lin (Tainan, Taiwan), Yu-Ping Wang (Hsinchu, Taiwan) and Chien-Ting Lin (Tainan, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device includes a magnetic tunneling junction (MTJ) on a substrate, a first spin orbit torque (SOT) layer on the MTJ, a second SOT layer on the first SOT layer, a hard mask between the first SOT layer and the second SOT layer, and a spacer adjacent to the MTJ, the first SOT layer, and the hard mask."

The patent was filed on March...