ALEXANDRIA, Va., June 16 -- United States Patent no. 12,310,045, issued on May 20, was assigned to UNITED MICROELECTRONICS CORP. (Hsin-Chu, Taiwan).
"High electron mobility transistor" was invented by Zhibiao Zhou (Singapore).
According to the abstract* released by the U.S. Patent & Trademark Office: "A high electron mobility transistor (HEMT) includes a first doped layer disposed in a substrate, a mesa isolation disposed on the substrate, a gate electrode disposed on the mesa isolation, a source electrode and a drain electrode disposed adjacent to two sides of the gate electrode, a passivation layer disposed on the mesa isolation and around the source electrode and the drain electrode, a first metal line connecting the source electrode a...