US Patent Issued to UNITED MICROELECTRONICS on May 13 for "Nanowire transistor and method for fabricating the same" (Taiwanese Inventors)

ALEXANDRIA, Va., June 12 -- United States Patent no. 12,302,608, issued on May 13, was assigned to UNITED MICROELECTRONICS CORP. (Hsin-Chu, Taiwan).

"Nanowire transistor and method for fabricating the same" was invented by Po-Kuang Hsieh (Kaohsiung, Taiwan), Shih-Hung Tsai (Tainan, Taiwan), Ching-Wen Hung (Tainan, Taiwan) and Chun-Hsien Lin (Tainan, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A nanowire transistor includes a channel structure on a substrate, a gate structure on and around the channel structure, a source/drain structure adjacent to two sides of the gate structure, and a contact plug connected to the source/drain structure. Preferably, the source/drain structure includes graphene and...