US Patent Issued to UNITED MICROELECTRONICS on May 13 for "Method of forming protective layer utilized in silicon remove process" (Singaporean, Taiwanese Inventors)

ALEXANDRIA, Va., June 12 -- United States Patent no. 12,300,534, issued on May 13, was assigned to UNITED MICROELECTRONICS CORP. (Hsin-Chu, Taiwan).

"Method of forming protective layer utilized in silicon remove process" was invented by Chia-Liang Liao (Yunlin County, Taiwan), Chee Hau Ng (Singapore), Ching-Yang Wen (Singapore) and Purakh Raj Verma (Singapore).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method of forming a protective layer utilized in a silicon remove process includes bonding a first wafer to a second wafer, wherein the first wafer comprises a first silicon substrate with a first device structure disposed thereon and the second wafer comprises a second silicon substrate with a second dev...