US Patent Issued to UNITED MICROELECTRONICS on May 13 for "Method for fabricating poly-insulator-poly capacitor" (Singaporean Inventor)

ALEXANDRIA, Va., June 12 -- United States Patent no. 12,302,591, issued on May 13, was assigned to UNITED MICROELECTRONICS CORP. (Hsin-Chu, Taiwan).

"Method for fabricating poly-insulator-poly capacitor" was invented by Linggang Fang (Singapore).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method for forming a poly-insulator-poly (PIP) capacitor is disclosed. A semiconductor substrate having a capacitor forming region is provided. A first capacitor dielectric layer is formed on the capacitor forming region. A first poly electrode is formed on the first capacitor dielectric layer. A second capacitor dielectric layer is formed on the first poly electrode. A second poly electrode is formed on the second capa...