US Patent Issued to UNITED MICROELECTRONICS on May 13 for "Lateral diffusion metal-oxide semiconductor device" (Taiwanese Inventors)

ALEXANDRIA, Va., June 12 -- United States Patent no. 12,300,748, issued on May 13, was assigned to UNITED MICROELECTRONICS CORP. (Hsin-Chu, Taiwan).

"Lateral diffusion metal-oxide semiconductor device" was invented by Ling-Chun Chou (Tainan, Taiwan), Yu-Hung Chang (Tainan, Taiwan) and Kun-Hsien Lee (Tainan, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A lateral diffusion metal-oxide semiconductor (LDMOS) device includes a first gate structure and a second gate structure extending along a first direction on a substrate, a first source region extending along the first direction on one side of the first gate structure, a second source region extending along the first direction on one side of the second...