US Patent Issued to UNITED MICROELECTRONICS on March 4 for "One-time programmable memory capacitor structure and manufacturing method thereof" (Taiwanese Inventors)

ALEXANDRIA, Va., March 5 -- United States Patent no. 12,245,424, issued on March 4, was assigned to UNITED MICROELECTRONICS Corp. (Hsinchu, Taiwan).

"One-time programmable memory capacitor structure and manufacturing method thereof" was invented by Kuo-Hsing Lee (Hsinchu County, Taiwan), Po-Wen Su (Kaohsiung, Taiwan), Chien-Liang Wu (Tainan, Taiwan) and Sheng-Yuan Hsueh (Tainan, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "An OTP memory capacitor structure includes a semiconductor substrate, a bottom electrode, a capacitor insulating layer and a metal electrode stack structure. The bottom electrode is provided on the semiconductor substrate. The capacitor insulating layer is provided on the bottom e...