US Patent Issued to United Microelectronics on March 4 for "Magnetic memory and manufacturing method thereof" (Taiwanese Inventors)

ALEXANDRIA, Va., March 5 -- United States Patent no. 12,245,521, issued on March 4, was assigned to United Microelectronics Corp. (Hsinchu, Taiwan).

"Magnetic memory and manufacturing method thereof" was invented by Chih-Wei Kuo (Tainan, Taiwan), Chung Yi Chiu (Tainan, Taiwan), Yi-Wei Tseng (New Taipei, Taiwan), Hsuan-Hsu Chen (Tainan, Taiwan) and Chun-Lung Chen (Tainan, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A magnetic memory including a substrate, a spin-orbit torque (SOT) layer, a magnetic tunnel junction (MTJ) stack, a first protection layer, and a second protection layer is provided. The SOT layer is located over the substrate. The MTJ stack is located on the SOT layer. The first protecti...