US Patent Issued to UNITED MICROELECTRONICS on March 25 for "Semiconductor high-voltage device having a buried gate dielectric layer" (Taiwanese Inventor)

ALEXANDRIA, Va., March 26 -- United States Patent no. 12,261,202, issued on March 25, was assigned to UNITED MICROELECTRONICS CORP. (Hsin-Chu, Taiwan).

"Semiconductor high-voltage device having a buried gate dielectric layer" was invented by Shin-Hung Li (Nantou County, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor high-voltage device includes a semiconductor substrate; a high-voltage well in the semiconductor substrate; a drift region in the high-voltage well; a recessed channel region adjacent to the drift region; a heavily doped drain region in the drift region and spaced apart from the recessed channel; an isolation structure between the recessed channel region and the heavily dop...