ALEXANDRIA, Va., March 26 -- United States Patent no. 12,262,555, issued on March 25, was assigned to United Microelectronics Corp. (Hsinchu, Taiwan).
"Semiconductor device and method of fabricating the same" was invented by Jia-He Lin (New Taipei, Taiwan), Yu-Ruei Chen (New Taipei, Taiwan) and Yu-Hsiang Lin (New Taipei, Taiwan).
According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device includes a substrate, a plurality of planar transistors, a fin-type field effect transistor and a first nonactive structure. The substrate includes a first region and a second region. The first region includes a plurality of first planar active regions and a nonactive region. The nonactive region is located between ...