ALEXANDRIA, Va., March 26 -- United States Patent no. 12,261,169, issued on March 25, was assigned to UNITED MICROELECTRONICS CORP. (Hsin-Chu, Taiwan).

"Semiconductor device and method for fabricating the same" was invented by Kuo-Hsing Lee (Hsinchu County, Taiwan), Sheng-Yuan Hsueh (Tainan, Taiwan), Chih-Kai Kang (Tainan, Taiwan), Chun-Hsien Lin (Tainan, Taiwan) and Chi-Horn Pai (Tainan, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method for fabricating a semiconductor device includes the steps of first providing a substrate having a first NMOS region, a first PMOS region, a second NMOS region, a second PMOS region, and a MOS capacitor region, forming a fin NMOS transistor on the first NMOS regi...