ALEXANDRIA, Va., March 26 -- United States Patent no. 12,261,086, issued on March 25, was assigned to UNITED MICROELECTRONICS CORP. (Hsin-Chu, Taiwan).

"Method for integrating high-voltage (HV) device, medium-voltage (MV) device, and low-voltage (LV) device" was invented by Chih-Kai Hsu (Tainan, Taiwan), Ssu-I Fu (Kaohsiung, Taiwan), Yu-Hsiang Lin (New Taipei, Taiwan), Chien-Ting Lin (Tainan, Taiwan), Chun-Ya Chiu (Tainan, Taiwan), Chia-Jung Hsu (Tainan, Taiwan) and Chin-Hung Chen (Tainan, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method for fabricating a semiconductor device includes first providing a substrate having a high-voltage (HV) region, a medium-voltage (MV) region, and a low-voltage ...