US Patent Issued to UNITED MICROELECTRONICS on March 25 for "Magnetoresistive random access memory with metal oxide layer on top surface and sidewall of MTJ" (Taiwanese Inventors)

ALEXANDRIA, Va., March 26 -- United States Patent no. 12,262,645, issued on March 25, was assigned to UNITED MICROELECTRONICS CORP. (Hsin-Chu, Taiwan).

"Magnetoresistive random access memory with metal oxide layer on top surface and sidewall of MTJ" was invented by An-Chi Liu (Tainan, Taiwan) and Chun-Hsien Lin (Tainan, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device includes a substrate having a magnetic tunneling junction (MTJ) region and a logic region, an inter-metal dielectric (IMD) layer on the substrate, a MTJ in the IMD layer on the MTJ region, a first metal interconnection in the IMD layer on the logic region, and protrusions adjacent to two sides of the first metal inte...