US Patent Issued to UNITED MICROELECTRONICS on March 25 for "Magnetoresistive random access memory and method for fabricating the same" (Taiwanese Inventors)

ALEXANDRIA, Va., March 26 -- United States Patent no. 12,262,544, issued on March 25, was assigned to UNITED MICROELECTRONICS CORP. (Hsin-Chu, Taiwan).

"Magnetoresistive random access memory and method for fabricating the same" was invented by Hung-Chan Lin (Tainan, Taiwan) and Yu-Ping Wang (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method for fabricating a semiconductor device includes the steps of: forming a magnetic tunneling junction (MTJ) on a substrate; forming a first spin orbit torque (SOT) layer on the MTJ; forming a passivation layer around the MTJ; forming a second SOT layer on the first SOT layer and the passivation layer, and patterning the second SOT layer and the passiva...