US Patent Issued to UNITED MICROELECTRONICS on March 25 for "Magnetoresistive random access memory and method for fabricating the same" (Taiwanese Inventors)

ALEXANDRIA, Va., March 26 -- United States Patent no. 12,262,646, issued on March 25, was assigned to UNITED MICROELECTRONICS CORP. (Hsin-Chu, Taiwan).

"Magnetoresistive random access memory and method for fabricating the same" was invented by Hui-Lin Wang (Taipei, Taiwan), Po-Kai Hsu (Tainan, Taiwan), Ju-Chun Fan (Tainan, Taiwan), Ching-Hua Hsu (Kaohsiung, Taiwan), Yi-Yu Lin (Taichung, Taiwan) and Hung-Yueh Chen (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method for fabricating a semiconductor device includes the steps of first forming a first inter-metal dielectric (IMD) layer on a substrate and a metal interconnection in the first IMD layer, forming a magnetic tunneling junction (MTJ...